Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
نویسندگان
چکیده
منابع مشابه
Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride
The metalorganic chemical vapor deposition of In0.06Ga0.94As1 xNx, with x 1⁄4 0.00–0.02, has been examined using nitrogen trifluoride (NF3) and tertiarybutylarsine. The solid N/V ratio increased linearly with the gas-phase N/V ratio up to a limit of 2.0% nitrogen in the film at a gas N/V 1⁄4 0.35. No further increase in nitrogen content could be achieved at a growth temperature of 550 1C unless...
متن کاملGrowth and Characterization of Iii-v Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition By
ii ABSTRACT Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on s...
متن کاملNitrogen-doped graphene by microwave plasma chemical vapor deposition
Available online 6 November 2012
متن کاملMETALORGANIC CHEMICAL VAPOR DEPOSITION AND INVESTIGATION OF ALGAINN MICROSTRUCTURE by
......................................................................................................... x
متن کاملTime-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition
GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1999
ISSN: 1092-5783
DOI: 10.1557/s1092578300002623